l IRF1010ESPbF IRF1010ELPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn.
n dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1010EL) is available for lowprofile applications. ID = 84A www.DataSheet4U.com D2Pak IRF1010ES TO-262 IRF1010EL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Ra.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF1010ES |
International Rectifier |
Power MOSFET | |
2 | IRF1010ES |
INCHANGE |
N-Channel MOSFET | |
3 | IRF1010E |
International Rectifier |
Power MOSFET | |
4 | IRF1010E |
INCHANGE |
N-Channel MOSFET | |
5 | IRF1010EL |
International Rectifier |
Power MOSFET | |
6 | IRF1010ELPbF |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRF1010EPBF |
International Rectifier |
Power MOSFET | |
8 | IRF1010EZ |
INCHANGE |
N-Channel MOSFET | |
9 | IRF1010EZ |
International Rectifier |
AUTOMOTIVE MOSFET | |
10 | IRF1010EZL |
International Rectifier |
AUTOMOTIVE MOSFET | |
11 | IRF1010EZLPbF |
International Rectifier |
POWER MOSFET | |
12 | IRF1010EZPbF |
International Rectifier |
POWER MOSFET |