Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for us.
0W in a typical surface mount application. The through-hole version (IRF1010EL) is available for lowprofile applications. S ID = 84A D2Pak IRF1010ES TO-262 IRF1010EL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seco.
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistan.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF1010E |
International Rectifier |
Power MOSFET | |
2 | IRF1010E |
INCHANGE |
N-Channel MOSFET | |
3 | IRF1010EL |
International Rectifier |
Power MOSFET | |
4 | IRF1010ELPbF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRF1010EPBF |
International Rectifier |
Power MOSFET | |
6 | IRF1010ESPbF |
International Rectifier |
HEXFET Power MOSFET | |
7 | IRF1010EZ |
INCHANGE |
N-Channel MOSFET | |
8 | IRF1010EZ |
International Rectifier |
AUTOMOTIVE MOSFET | |
9 | IRF1010EZL |
International Rectifier |
AUTOMOTIVE MOSFET | |
10 | IRF1010EZLPbF |
International Rectifier |
POWER MOSFET | |
11 | IRF1010EZPbF |
International Rectifier |
POWER MOSFET | |
12 | IRF1010EZS |
International Rectifier |
AUTOMOTIVE MOSFET |