IRF1010EZ |
Part Number | IRF1010EZ |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor IRF1010EZ,IIRF1010EZ ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot v... |
Features |
·Static drain-source on-resistance: RDS(on) ≤8.5mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 340 PD Total Dissipation @TC=25℃ 140 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W... |
Document |
IRF1010EZ Data Sheet
PDF 241.08KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IRF1010E |
International Rectifier |
Power MOSFET | |
2 | IRF1010E |
INCHANGE |
N-Channel MOSFET | |
3 | IRF1010EL |
International Rectifier |
Power MOSFET | |
4 | IRF1010ELPbF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRF1010EPBF |
International Rectifier |
Power MOSFET |