Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this desig.
O O O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 60V RDS(on) = 8.5mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanch.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRF1010EZL |
International Rectifier |
AUTOMOTIVE MOSFET | |
2 | IRF1010EZ |
INCHANGE |
N-Channel MOSFET | |
3 | IRF1010EZ |
International Rectifier |
AUTOMOTIVE MOSFET | |
4 | IRF1010EZPbF |
International Rectifier |
POWER MOSFET | |
5 | IRF1010EZS |
International Rectifier |
AUTOMOTIVE MOSFET | |
6 | IRF1010EZS |
INCHANGE |
N-Channel MOSFET | |
7 | IRF1010EZSPBF |
International Rectifier |
POWER MOSFET | |
8 | IRF1010E |
International Rectifier |
Power MOSFET | |
9 | IRF1010E |
INCHANGE |
N-Channel MOSFET | |
10 | IRF1010EL |
International Rectifier |
Power MOSFET | |
11 | IRF1010ELPbF |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRF1010EPBF |
International Rectifier |
Power MOSFET |