IRF1010EPBF - International Rectifier

IRF1010EPBF Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for us.

Features

uous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient www.irf.com PD - 94965B IRF1010EPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ ID = 84A‡ S TO-220AB Max. 84‡ 59 330 200 1.4 ± 20 50 17 4.0 -55 to + 175 300 (.