Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Features •N-channel,normallevel •FastDiodewithreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Paramete.
•N-channel,normallevel
•FastDiodewithreducedQrr
•Optimizedforhardcommutationruggedness
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 300 V
RDS(on),max
41
mΩ
ID 44 A
OptiMOSTMPower-Transistor,300V IPP410N30N
TO-220-3
tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPP410N30N
Package PG-TO220-3
Marking 410N30N
RelatedLinks -
.
IPP410N30N - INCHANGE
isc N-Channel MOSFET Transistor IPP410N30N，IIPP410N30N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤41mΩ ·En.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP45N04S4L-08 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 2 | IPP45N06S3-16 |
Infineon Technologies |
OptiMOS-T Power-Transistor |
|
| 3 | IPP45N06S3L-13 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 4 | IPP45N06S4-09 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 5 | IPP45N06S4L-08 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 6 | IPP45P03P4L-11 |
Infineon Technologies |
OptiMOS-P2 Power-Transistor |
|
| 7 | IPP47N10S-33 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 8 | IPP47N10SL-26 |
Infineon Technologies |
SIPMOS Power-Transistor |
|
| 9 | IPP011N03LF2S |
Infineon |
MOSFET |
|
| 10 | IPP014N06NF2S |
Infineon |
MOSFET |
|
| 11 | IPP015N04N |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IPP015N04N |
Infineon |
Power Transistor |
|