www.DataSheet.co.kr IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max (SMD version) ID 60 9.2 45 V mΩ A Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPB45N06S4-09 IP.
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Marking 4N0609 4N0609 4N0609
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage tem.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP45N06S4L-08 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor | |
2 | IPP45N06S3-16 |
Infineon Technologies |
OptiMOS-T Power-Transistor | |
3 | IPP45N06S3L-13 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor | |
4 | IPP45N04S4L-08 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor | |
5 | IPP45P03P4L-11 |
Infineon Technologies |
OptiMOS-P2 Power-Transistor | |
6 | IPP410N30N |
Infineon Technologies |
MOSFET | |
7 | IPP410N30N |
INCHANGE |
N-Channel MOSFET | |
8 | IPP47N10S-33 |
Infineon Technologies |
SIPMOS Power-Transistor | |
9 | IPP47N10SL-26 |
Infineon Technologies |
SIPMOS Power-Transistor | |
10 | IPP011N03LF2S |
Infineon |
MOSFET | |
11 | IPP014N06NF2S |
Infineon |
MOSFET | |
12 | IPP015N04N |
INCHANGE |
N-Channel MOSFET |