and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, c.
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• Avalanche tested PG-TO263-3-2
Product Summary V DS R DS(on),max (SMD version) ID 55 15.4 45 V mΩ A
PG-TO262-3-1
PG-TO220-3-1
Type IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16
Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Ordering Code SP0001-02224 SP0001-02217 SP0001-02218
Marking 3N0616 3N0616 3N0616
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions ID T.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP45N06S3L-13 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor | |
2 | IPP45N06S4-09 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor | |
3 | IPP45N06S4L-08 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor | |
4 | IPP45N04S4L-08 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor | |
5 | IPP45P03P4L-11 |
Infineon Technologies |
OptiMOS-P2 Power-Transistor | |
6 | IPP410N30N |
Infineon Technologies |
MOSFET | |
7 | IPP410N30N |
INCHANGE |
N-Channel MOSFET | |
8 | IPP47N10S-33 |
Infineon Technologies |
SIPMOS Power-Transistor | |
9 | IPP47N10SL-26 |
Infineon Technologies |
SIPMOS Power-Transistor | |
10 | IPP011N03LF2S |
Infineon |
MOSFET | |
11 | IPP014N06NF2S |
Infineon |
MOSFET | |
12 | IPP015N04N |
INCHANGE |
N-Channel MOSFET |