Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
IPP410N30N |
Click to view a larger image
| Part Number | IPP410N30N |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPP410N30N，IIPP410N30N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤41mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot ... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤41mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Optimized for hard commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 44 IDM Drain Current-Single Pulsed 176 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL C... |
| Document |
 IPP410N30N Data Sheet
PDF 240.53KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP410N30N |
Infineon Technologies |
MOSFET |
|
| 2 | IPP45N04S4L-08 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 3 | IPP45N06S3-16 |
Infineon Technologies |
OptiMOS-T Power-Transistor |
|
| 4 | IPP45N06S3L-13 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 5 | IPP45N06S4-09 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|