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IPP410N30N |
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| Part Number | IPP410N30N |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Features •N-channel,normallevel •FastDiodewithreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoH... |
| Features |
•N-channel,normallevel •FastDiodewithreducedQrr •Optimizedforhardcommutationruggedness •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 300 V RDS(on),max 41 mΩ ID 44 A OptiMOSTMPower-Transistor,300V IPP410N30N TO-220-3 tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPP410N30N Package PG-TO220-3 Marking 410N30N RelatedLinks - ... |
| Document |
 IPP410N30N Data Sheet
PDF 1.75MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP410N30N |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPP45N04S4L-08 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 3 | IPP45N06S3-16 |
Infineon Technologies |
OptiMOS-T Power-Transistor |
|
| 4 | IPP45N06S3L-13 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|
| 5 | IPP45N06S4-09 |
Infineon Technologies |
OptiMOS-T2 Power-Transistor |
|