IPP47N10S-33 - Infineon Technologies

IPP47N10S-33 SIPMOS Power-Transistor

and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements compo.

Features

ature IEC climatic category; DIN IEC 68-1 2006-02-14 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. max. 0.85 62 62 40 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol .