IPP111N15N3 - Infineon

IPP111N15N3 Power-Transistor

IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according.

Features

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 150 V 10.8 mW 83 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; Halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
•Halogen-free according to IEC61249-2-21 Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G Package Marking PG-TO263 108N15N PG-TO220-3 111N15N PG-TO262-3 111N15N Maximum ratings, at T j=25 °C, unless otherwise sp.