IPP110N20N3G - Infineon Technologies

IPP110N20N3G Power Transistor

IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 P.

Features

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21 Product Summary VDS RDS(on),max (TO263) ID 200 10.7 88 V mW A
• Ideal for high-frequency switching and synchronous rectification Type IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G Package Marking PG-TO263-3 107N20N PG-TO220-3 110N20N PG-TO262-3 110N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter.