Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
IPB107N20NA IPP110N20NA OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO263) ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronous rectification
Type
IPB107N20NA
IPP110N20NA
200 V 10.7 mW 88 A
Package Marking
PG-TO263-3 107N20NA
PG-TO220-3 110N20NA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pul.
IPP110N20NA - INCHANGE
isc N-Channel MOSFET Transistor IPP110N20NA，IIPP110N20NA ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·E.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP110N20N3 |
Infineon |
Power-Transistor |
|
| 2 | IPP110N20N3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPP110N20N3G |
Infineon Technologies |
Power Transistor |
|
| 4 | IPP110N06L |
Infineon |
Power-Transistor |
|
| 5 | IPP110N06LG |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPP111N15N3 |
Infineon |
Power-Transistor |
|
| 7 | IPP111N15N3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPP111N15N3G |
Infineon Technologies |
Power Transistor |
|
| 9 | IPP114N03LG |
Infineon |
Power-Transistor |
|
| 10 | IPP114N12N3 |
Infineon |
Power-Transistor |
|
| 11 | IPP114N12N3 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IPP114N12N3G |
Infineon |
Power-Transistor |
|