Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
IPP111N15N3 |
Click to view a larger image
| Part Number | IPP111N15N3 |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor IPP111N15N3，IIPP111N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-L... |
| Features |
·Static drain-source on-resistance: RDS(on) ≤11.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 83 IDM Drain Current-Single Pulsed 332 PD Total Dissipation @TC=25℃ 214 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT ... |
| Document |
 IPP111N15N3 Data Sheet
PDF 240.93KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP111N15N3 |
Infineon |
Power-Transistor |
|
| 2 | IPP111N15N3G |
Infineon Technologies |
Power Transistor |
|
| 3 | IPP110N06L |
Infineon |
Power-Transistor |
|
| 4 | IPP110N06LG |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPP110N20N3 |
Infineon |
Power-Transistor |
|