Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant • Halogen-free ac.
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPP114N03L G
IPB114N03L G
Product Summary V DS R DS(on),max ID
IPP114N03L G IPB114N03L G
30 V 11.4 mΩ 30 A
Package Marking
PG-TO220-3-1 114N03L
PG-TO263-3 114N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Con.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPP114N12N3 |
Infineon |
Power-Transistor | |
2 | IPP114N12N3 |
INCHANGE |
N-Channel MOSFET | |
3 | IPP114N12N3G |
Infineon |
Power-Transistor | |
4 | IPP110N06L |
Infineon |
Power-Transistor | |
5 | IPP110N06LG |
Infineon Technologies |
Power-Transistor | |
6 | IPP110N20N3 |
Infineon |
Power-Transistor | |
7 | IPP110N20N3 |
INCHANGE |
N-Channel MOSFET | |
8 | IPP110N20N3G |
Infineon Technologies |
Power Transistor | |
9 | IPP110N20NA |
Infineon |
Power-Transistor | |
10 | IPP110N20NA |
INCHANGE |
N-Channel MOSFET | |
11 | IPP111N15N3 |
Infineon |
Power-Transistor | |
12 | IPP111N15N3 |
INCHANGE |
N-Channel MOSFET |