Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
isc N-Channel MOSFET Transistor IPP110N20N3，IIPP110N20N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIM.
·Static drain-source on-resistance:
RDS(on) ≤11mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
88
IDM
Drain Current-Single Pulsed
352
PD
Total Dissipation @TC=25℃
300
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V .
IPP110N20N3 - Infineon
IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent ga.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP110N20N3G |
Infineon Technologies |
Power Transistor |
|
| 2 | IPP110N20NA |
Infineon |
Power-Transistor |
|
| 3 | IPP110N20NA |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPP110N06L |
Infineon |
Power-Transistor |
|
| 5 | IPP110N06LG |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPP111N15N3 |
Infineon |
Power-Transistor |
|
| 7 | IPP111N15N3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPP111N15N3G |
Infineon Technologies |
Power Transistor |
|
| 9 | IPP114N03LG |
Infineon |
Power-Transistor |
|
| 10 | IPP114N12N3 |
Infineon |
Power-Transistor |
|
| 11 | IPP114N12N3 |
INCHANGE |
N-Channel MOSFET |
|
| 12 | IPP114N12N3G |
Infineon |
Power-Transistor |
|