IPP076N12N3G - Infineon

IPP076N12N3G Power-Transistor

IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Idea.

Features

• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant; halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification 120 V 7.6 mW 100 A Type IPI076N12N3 G IPP076N12N3 G Package Marking PG-TO262-3 076N12N PG-TO220-3 076N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T.