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IPP076N12N3G |
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| Part Number | IPP076N12N3G |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification 120 V 7.6 mW 100 A Type IPI076N12N3 G IPP076N12N3 G Package Marking PG-TO262-3 076N12N PG-TO220-3 076N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T... |
| Document |
 IPP076N12N3G Data Sheet
PDF 483.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPP076N12N3 |
Infineon |
Power-Transistor |
|
| 2 | IPP076N12N3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPP076N15N5 |
Infineon |
MOSFET |
|
| 4 | IPP076N15N5 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPP070N06LG |
Infineon Technologies |
Power-Transistor |
|