Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
. . ..
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Verylowreverserecoverycharge(Qrr)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 150 V
RDS(on),max
7.6
mΩ
ID 112 A
Qrr 96 nC
TO-220-3
tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPP076N15N5
Package PG-TO220-3
Marking 07.
IPP076N15N5 - INCHANGE
isc N-Channel MOSFET Transistor IPP076N15N5，IIPP076N15N5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.6mΩ ·.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP076N12N3 |
Infineon |
Power-Transistor |
|
| 2 | IPP076N12N3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPP076N12N3G |
Infineon |
Power-Transistor |
|
| 4 | IPP070N06LG |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPP070N06NG |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPP070N08N3 |
Infineon |
Power-Transistor |
|
| 7 | IPP070N08N3 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPP070N08N3G |
Infineon |
Power-Transistor |
|
| 9 | IPP072N10N3 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPP072N10N3 |
Infineon |
Power Transistor |
|
| 11 | IPP072N10N3G |
Infineon |
Power Transistor |
|
| 12 | IPP073N13NM6 |
Infineon |
MOSFET |
|