IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary V DS R DS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-fr.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPI072N10N3 G
IPP072N10N3 G
100 V 7.2 mΩ 80 A
Package Marking
PG-TO262-3 072N10N
PG-TO220-3 072N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
.
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---|---|---|---|---|
1 | IPP072N10N3 |
INCHANGE |
N-Channel MOSFET | |
2 | IPP072N10N3 |
Infineon |
Power Transistor | |
3 | IPP070N06LG |
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Power-Transistor | |
4 | IPP070N06NG |
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Power-Transistor | |
5 | IPP070N08N3 |
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6 | IPP070N08N3 |
INCHANGE |
N-Channel MOSFET | |
7 | IPP070N08N3G |
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Power-Transistor | |
8 | IPP073N13NM6 |
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MOSFET | |
9 | IPP075N15N3 |
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Power-Transistor | |
10 | IPP075N15N3 |
INCHANGE |
N-Channel MOSFET | |
11 | IPP075N15N3G |
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Power Transistor | |
12 | IPP076N12N3 |
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