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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP072N10N3，IIPP072N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of application.
·Static drain-source on-resistance:
RDS(on) ≤7.2mΩ
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·reliable device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
80
IDM
Drain Current-Single Pulsed
320
PD
Total Dissipation @TC=25℃
150
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A .
IPP072N10N3 - Infineon
IPP072N10N3 G IPI072N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R D.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPP072N10N3G |
Infineon |
Power Transistor |
|
| 2 | IPP070N06LG |
Infineon Technologies |
Power-Transistor |
|
| 3 | IPP070N06NG |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPP070N08N3 |
Infineon |
Power-Transistor |
|
| 5 | IPP070N08N3 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IPP070N08N3G |
Infineon |
Power-Transistor |
|
| 7 | IPP073N13NM6 |
Infineon |
MOSFET |
|
| 8 | IPP075N15N3 |
Infineon |
Power-Transistor |
|
| 9 | IPP075N15N3 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPP075N15N3G |
Infineon Technologies |
Power Transistor |
|
| 11 | IPP076N12N3 |
Infineon |
Power-Transistor |
|
| 12 | IPP076N12N3 |
INCHANGE |
N-Channel MOSFET |
|