IPP070N06NG - Infineon Technologies

IPP070N06NG Power-Transistor

www.DataSheet4U.com IPB070N06N G IPP070N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 6.7 80 V mΩ A Type IPB070N06N G IPP070N06N.

Features

• Low gate charge for fast switching applications
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 6.7 80 V mΩ A Type IPB070N06N G IPP070N06N G Type IPB066N06N G Package IPP066N06N G Marking Package P-TO263-3-2 P-TO263-3-2 070N06N P-TO220-3-1 Marking P-TO220-3-1 066N06N 070N06N 066N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy.