IPC26N10NR - Infineon

IPC26N10NR MOSFET

•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP05CN10NG1) •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlSisystem •Passivation:nitr.

Features

-3-1 (see ref. product) Final Data Sheet 2 Rev.2.5,2014-10-03 OptiMOS™2PowerMOSTransistorChip IPC26N10NR 2ElectricalCharacteristicsonWaferLevel atTj=25°C,unlessotherwisespecified Table2 Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Internal gate resistance Additional gate resistor Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD RG RGadd EAS Min. 100 2 - Values Typ. Max. -- -4 0.1 1 1 3..