IPC020N10L3 - Infineon

IPC020N10L3 MOSFET

•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofBSZ440N10LS3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitri.

Features

Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min. 100 1.1 - Values Typ. Max. -1.7 2.1 0.1 1 1 100 422) 1003) 1.0 1.2 184) - Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=12µA µA VGS=0V,VDS=100V nA VGS=20V,VDS=0V mΩ VGS=4.5V,ID=2.0A V VGS=0V,IF=1A mJ ID =12 A, RGS =25 Ω 1) packaged in a S308 (see ref. product). Maximum RDS(on) at VGS=10V 2)typic.