•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPD135N03LG •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitride.
ource breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD Min. 30 1 - Values Typ. Max. -- 2.2 0.1 2 10 100 10.32) 503) 0.86 1.1 Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=250µA µA VGS=0V,VDS=30V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A 1) packaged in a PG-TO263-7 (see ref. product) 2)typicalbaredieRDS(on);VGS=10V,whenusedwith4x500µmAl-wedgedoublestitchbonding 3) limited by wafer tes.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPC020N10L3 |
Infineon |
MOSFET | |
2 | IPC022N03L3 |
Infineon |
MOSFET | |
3 | IPC028N03L3 |
Infineon |
MOSFET | |
4 | IPC042N03L3 |
Infineon |
MOSFET | |
5 | IPC045N10L3 |
Infineon |
MOSFET | |
6 | IPC045N10N3 |
Infineon |
MOSFET | |
7 | IPC045N25N3 |
Infineon |
MOSFET | |
8 | IPC055N03L3 |
Infineon |
MOSFET | |
9 | IPC100N04S4-02 |
Infineon |
Power-Transistor | |
10 | IPC100N04S5-1R2 |
Infineon |
Power-Transistor | |
11 | IPC100N04S5-1R7 |
Infineon |
Power-Transistor | |
12 | IPC100N04S5-1R9 |
Infineon |
Power-Transistor |