IPC218N06L3 - Infineon

IPC218N06L3 MOSFET

•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPB016N06L3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passivation:nitrid.

Features

rce breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS Min. 60 1.2 - Values Typ. Max. -1.7 2.2 0.1 3 1 100 1.22) 1003) 0.7 1.1 5004) - Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=196µA µA VGS=0V,VDS=60V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A mJ ID =30 A, RGS =25 Ω 1) packaged in a P-TO263-7 (see ref. product) 2)typicalbaredieRDS(on) 3) limited by wafer tes.