IPC26N10NR |
Part Number | IPC26N10NR |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPP05CN10NG1) •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiv... |
Features |
-3-1 (see ref. product)
Final Data Sheet
2
Rev.2.5,2014-10-03
OptiMOS™2PowerMOSTransistorChip
IPC26N10NR
2ElectricalCharacteristicsonWaferLevel
atTj=25°C,unlessotherwisespecified
Table2
Parameter
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Internal gate resistance Additional gate resistor Avalanche energy, single pulse
Symbol
V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD RG RGadd EAS
Min. 100 2 -
Values
Typ. Max.
--
-4
0.1 1
1 3.... |
Document |
IPC26N10NR Data Sheet
PDF 887.93KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPC26N12N |
Infineon |
MOSFET | |
2 | IPC218N04N3 |
Infineon |
MOSFET | |
3 | IPC218N06L3 |
Infineon |
MOSFET | |
4 | IPC218N06N3 |
Infineon |
MOSFET | |
5 | IPC014N03L3 |
Infineon |
MOSFET |