IPC022N03L3 - Infineon

IPC022N03L3 MOSFET

•N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofIPD075N03LG •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C •Diebond:solderedorglued •Sawnonfoil •Backsidemetallization:NiVsystem •Frontsidemetallization:AlCusystem •Passi.

Features

meter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Internal gate resistance Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD RG EAS Min. 30 1 - Values Typ. Max. -- 2.2 0.1 1 10 100 5.32) 503) 0.75 1.1 1.3 504) - Unit Note/TestCondition V VGS=0V,ID=1mA V VDS=VGS,ID=250µA µA VGS=0V,VDS=30V nA VGS=20V,VDS=0V mΩ VGS=10V,ID=2.0A V VGS=0V,IF=1A ΩmJ ID =12 A, RGS =25 Ω 1) packaged in a PG-TO252-3 (see ref. product) 2)typ.