IPC100N04S5L-2R6 - Infineon

IPC100N04S5L-2R6 Power-Transistor

IPC100N04S5L-2R6 OptiMOS™-5 Power-Transistor Features • OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V 2.6 mW 100 A PG-TDSON-8-3.

Features

• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V 2.6 mW 100 A PG-TDSON-8-33 1 1 Type IPC100N04S5L-2R6 Package Marking PG-TDSON-8-33 5N04L2R6 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) .