OptiMOSTM-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • Green product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPC100N04S4-02 Product Summary VDS RDS(on) ID 40 V 2.4 m 100 A PG-TDSON-8-23 1 1 Type IPC100N04S4-02 Package PG-TDSON-8-23 Mark.
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• Green product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
IPC100N04S4-02
Product Summary VDS RDS(on) ID
40 V 2.4 m 100 A
PG-TDSON-8-23
1 1
Type IPC100N04S4-02
Package PG-TDSON-8-23
Marking 4N0402
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current2) Avalanche energy, single pulse4) Avalanche current, single pulse Gate source voltage
ID
I D,pulse E AS I AS V GS
T C=25°C, T J .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPC100N04S5-1R2 |
Infineon |
Power-Transistor | |
2 | IPC100N04S5-1R7 |
Infineon |
Power-Transistor | |
3 | IPC100N04S5-1R9 |
Infineon |
Power-Transistor | |
4 | IPC100N04S5-2R8 |
Infineon |
Power-Transistor | |
5 | IPC100N04S5L-1R1 |
Infineon |
Power-Transistor | |
6 | IPC100N04S5L-1R5 |
Infineon |
Power-Transistor | |
7 | IPC100N04S5L-1R9 |
Infineon |
Power-Transistor | |
8 | IPC100N04S5L-2R6 |
Infineon |
Power-Transistor | |
9 | IPC171N04N |
Infineon |
MOSFET | |
10 | IPC173N10N3 |
Infineon |
MOSFET | |
11 | IPC014N03L3 |
Infineon |
MOSFET | |
12 | IPC020N10L3 |
Infineon |
MOSFET |