IPC100N04S5L-2R6 |
Part Number | IPC100N04S5L-2R6 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | IPC100N04S5L-2R6 OptiMOS™-5 Power-Transistor Features • OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak r... |
Features |
• OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 40 V 2.6 mW 100 A PG-TDSON-8-33 1 1 Type IPC100N04S5L-2R6 Package Marking PG-TDSON-8-33 5N04L2R6 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) ... |
Document |
IPC100N04S5L-2R6 Data Sheet
PDF 385.14KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IPC100N04S5L-1R1 |
Infineon |
Power-Transistor | |
2 | IPC100N04S5L-1R5 |
Infineon |
Power-Transistor | |
3 | IPC100N04S5L-1R9 |
Infineon |
Power-Transistor | |
4 | IPC100N04S5-1R2 |
Infineon |
Power-Transistor | |
5 | IPC100N04S5-1R7 |
Infineon |
Power-Transistor |