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IPC100N04S5L-1R9 - Infineon

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IPC100N04S5L-1R9 Power-Transistor

IPC100N04S5L-1R9 OptiMOS™-5 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.9 mW 100 A PG-TDSON-8-34 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) 1 1 • 100% Aval.

Features


• OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 1.9 mW 100 A PG-TDSON-8-34
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant) 1 1
• 100% Avalanche tested Type IPC100N04S5L-1R9 Package Marking PG-TDSON-8-34 5N04L1R9 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche cur.

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