IPB180N04S4L-H0 - Infineon

IPB180N04S4L-H0 Power-Transistor

Data Sheet IPB180N04S4L-H0 OptiMOSTM-T2 Power-Transistor Features • N-channel Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on) ID 40 V 1.0 mΩ 180 A PG-TO263-7-3 Type IPB180N04S4L-H0 Package PG-TO263-7-3 Marki.

Features

• N-channel Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested Product Summary VDS RDS(on) ID 40 V 1.0 mΩ 180 A PG-TO263-7-3 Type IPB180N04S4L-H0 Package PG-TO263-7-3 Marking 4N04LH0 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=90 A Avalanche current, single pulse I AS.