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IPB180N04S4L-H0 |
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| Part Number | IPB180N04S4L-H0 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Data Sheet IPB180N04S4L-H0 OptiMOSTM-T2 Power-Transistor Features • N-channel Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green prod... |
| Features |
• N-channel Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on) ID 40 V 1.0 mΩ 180 A PG-TO263-7-3 Type IPB180N04S4L-H0 Package PG-TO263-7-3 Marking 4N04LH0 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=90 A Avalanche current, single pulse I AS... |
| Document |
 IPB180N04S4L-H0 Data Sheet
PDF 209.19KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB180N04S4L-01 |
Infineon |
Power-Transistor |
|
| 2 | IPB180N04S4-00 |
Infineon |
Power-Transistor |
|
| 3 | IPB180N04S4-01 |
Infineon |
Power-Transistor |
|
| 4 | IPB180N04S4-H0 |
Infineon |
Power-Transistor |
|
| 5 | IPB180N03S4L-01 |
Infineon |
Power-Transistor |
|