IPB180P04P4L-02 - Infineon

IPB180P04P4L-02 Power-Transistor

Final Data Sheet IPB180P04P4L-02 OptiMOS®-P2 Power-Transistor Product Summary V DS R DS(on),max ID -40 V 2.4 mW -180 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Intended for reverse battery protection Type .

Features

• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Intended for reverse battery protection Type IPB180P04P4L-02 Package PG-TO263-7-3 Marking 4QP04L02 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=-10V1) T C=100°C, V GS=-10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse E AS I D= -90A Avalanche current, single pulse I AS - Gate source volt.