OptiMOSTM-T2 Power-Transistor Features • N-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB180N10S4-03 Product Summary VDS RDS(on) ID 100 V 3.3 mW 180 A PG-TO263-7-3 Type IPB180N10S4-03 Package PG-TO263-7-3 Marking 4N1003 .
• N-channel - Normal Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB180N10S4-03
Product Summary VDS RDS(on) ID
100 V 3.3 mW 180 A
PG-TO263-7-3
Type IPB180N10S4-03
Package PG-TO263-7-3
Marking 4N1003
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100°C, V GS=10V2)
Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB180N10S4-02 |
Infineon |
Power-Transistor | |
2 | IPB180N03S4L-01 |
Infineon |
Power-Transistor | |
3 | IPB180N03S4L-H0 |
Infineon |
Power-Transistor | |
4 | IPB180N04S4-00 |
Infineon |
Power-Transistor | |
5 | IPB180N04S4-01 |
Infineon |
Power-Transistor | |
6 | IPB180N04S4-H0 |
Infineon |
Power-Transistor | |
7 | IPB180N04S4L-01 |
Infineon |
Power-Transistor | |
8 | IPB180N04S4L-H0 |
Infineon |
Power-Transistor | |
9 | IPB180N06S4-H1 |
Infineon |
Power-Transistor | |
10 | IPB180P04P4-03 |
Infineon |
Power-Transistor | |
11 | IPB180P04P4L-02 |
Infineon |
Power-Transistor | |
12 | IPB100N04S2-04 |
Infineon Technologies |
Power-Transistor |