IPB180N06S4-H1 - Infineon

IPB180N06S4-H1 Power-Transistor

OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon • Ultra high ID IPB180N06S4-H1 Product Summary V DS R DS(on),max ID 60 V 1.7 mΩ 180 A PG-TO263-7-3 Type IPB180N06S4-H1 Package PG.

Features

• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Ultra low RDSon
• Ultra high ID IPB180N06S4-H1 Product Summary V DS R DS(on),max ID 60 V 1.7 mΩ 180 A PG-TO263-7-3 Type IPB180N06S4-H1 Package PG-TO263-7-3 Marking 4N06H1 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) I D,pulse T C=25°C Avalanche energy, single pulse2) E AS I D.