IPB180N03S4L-H0 - Infineon

IPB180N03S4L-H0 Power-Transistor

IPB180N03S4L-H0 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary V DS R DS(on) ID 30 V 0.95 mΩ 180 A PG-TO263-7-3 Type IPB180N03S4L-H0 Package PG-TO263-7-3 Marking.

Features

• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested Product Summary V DS R DS(on) ID 30 V 0.95 mΩ 180 A PG-TO263-7-3 Type IPB180N03S4L-H0 Package PG-TO263-7-3 Marking 4N03LH0 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS T C=25 °C I D=90 A Avalanche current, single.