. . . . . . . . 1 Maximum ratings . . . 3 Thermal characteristics . . . .
• N‑channel, normal level
• Very low on‑resistance RDS(on)
• Superior thermal resistance
• 100% avalanche tested
• Pb‑free lead plating; RoHS compliant
• Halogen‑free according to IEC61249‑2‑21
• MSL 1 classified according to J‑STD‑020
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
150
V
RDS(on),max
2.9
mΩ
ID
165
A
Qoss
310
nC
QG
105
nC
Qrr (500A/μs)
220
nC
Type/Ordering Code IPB029N15NM6
Package PG‑TO263‑3
D²PAK
tab
2 1
3
32 1
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB029N06N3 |
INCHANGE |
N-Channel MOSFET | |
2 | IPB029N06N3 |
Infineon |
Power Transistor | |
3 | IPB029N06N3G |
Infineon Technologies |
Power-Transistor | |
4 | IPB029N06NF2S |
Infineon |
MOSFET | |
5 | IPB020N08N5 |
Infineon |
MOSFET | |
6 | IPB020N10N5 |
Infineon |
MOSFET | |
7 | IPB020N10N5 |
INCHANGE |
N-Channel MOSFET | |
8 | IPB020N10N5LF |
INCHANGE |
N-Channel MOSFET | |
9 | IPB020N10N5LF |
Infineon |
MOSFET | |
10 | IPB021N06N3 |
Infineon |
Power Transistor | |
11 | IPB021N06N3G |
Infineon Technologies |
Power-Transistor | |
12 | IPB021N06N3G |
INCHANGE |
N-Channel MOSFET |