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Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformancePara.
•Idealforhighfrequencyswitchingandsync.rec.
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 80
V
RDS(on),max
2.0
mΩ
ID 120 A
Qoss 156 nC
QG(0V..10V)
133
nC
OptiMOSª5Power-Transistor,80V IPB020N08N5
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB020N08N5
Package .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB020N10N5 |
Infineon |
MOSFET |
|
| 2 | IPB020N10N5 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPB020N10N5LF |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPB020N10N5LF |
Infineon |
MOSFET |
|
| 5 | IPB021N06N3 |
Infineon |
Power Transistor |
|
| 6 | IPB021N06N3G |
Infineon Technologies |
Power-Transistor |
|
| 7 | IPB021N06N3G |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPB022N12NM6 |
Infineon |
MOSFET |
|
| 9 | IPB023N04N |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IPB023N04N |
Infineon |
Power Transistor |
|
| 11 | IPB023N04NG |
Infineon Technologies |
Power-Transistor |
|
| 12 | IPB024N08N5 |
Infineon |
MOSFET |
|