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. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Optimizedforwiderangeofapplications
•N-channel,normallevel
•100%avalanchetested
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
QualifiedaccordingtoJEDECStandard
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
2.9
mΩ
ID
120
A
Qoss
68
nC
QG(0V..10V)
68
nC
D²PAK
tab
2 1
3
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB029N06NF2S
Package PG-TO263-3
Marking 029N06NS
RelatedLinks -
Final Data Sheet
1
Rev.2.0,2022-10-19
StrongIRFETTM2Power-Tran.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB029N06N3 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPB029N06N3 |
Infineon |
Power Transistor |
|
| 3 | IPB029N06N3G |
Infineon Technologies |
Power-Transistor |
|
| 4 | IPB029N15NM6 |
Infineon |
MOSFET |
|
| 5 | IPB020N08N5 |
Infineon |
MOSFET |
|
| 6 | IPB020N10N5 |
Infineon |
MOSFET |
|
| 7 | IPB020N10N5 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IPB020N10N5LF |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPB020N10N5LF |
Infineon |
MOSFET |
|
| 10 | IPB021N06N3 |
Infineon |
Power Transistor |
|
| 11 | IPB021N06N3G |
Infineon Technologies |
Power-Transistor |
|
| 12 | IPB021N06N3G |
INCHANGE |
N-Channel MOSFET |
|