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. . . . . 1 Maximum ratings 3 Thermal characteristics .
•Idealforhot-swapande-fuseapplications
•Verylowon-resistanceRDS(on)
•WidesafeoperatingareaSOA
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
2.0
mΩ
ID
176
A
Ipulse(VDS=56V,tp=10 ms)
10.2
A
D²PAK
tab
1 3
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB020N10N5LF
Package PG-TO263-3
Marking 020N10LF
RelatedLinks -
1) J-.
IPB020N10N5LF - INCHANGE
Isc N-Channel MOSFET Transistor IPB020N10N5LF ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate ch.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB020N10N5 |
Infineon |
MOSFET |
|
| 2 | IPB020N10N5 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPB020N08N5 |
Infineon |
MOSFET |
|
| 4 | IPB021N06N3 |
Infineon |
Power Transistor |
|
| 5 | IPB021N06N3G |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPB021N06N3G |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPB022N12NM6 |
Infineon |
MOSFET |
|
| 8 | IPB023N04N |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPB023N04N |
Infineon |
Power Transistor |
|
| 10 | IPB023N04NG |
Infineon Technologies |
Power-Transistor |
|
| 11 | IPB024N08N5 |
Infineon |
MOSFET |
|
| 12 | IPB024N08NF2S |
Infineon |
MOSFET |
|