3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? 7I">
IeQ "%&$!"#™3 Power-Transistor Features Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3 B53 Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI G ? > B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q 1F1<1>3 85 D5CD54 Q) 2 6B55 @<1D9>7 + ? " , 3 ? =@<91>D Q* E1<96954 13 3 ? B49>7 D? $ .
Q#451<6? B8978 6B5AE5>3 I CG9D3 89>7 1>4 CI>3
B53
Q( @D9=9J54 D53 8>? 7I 6? B 3 ? >F5BD5BC Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & Q. 5BI G ? > B5C9CD1>3 5 + 9H"[Z# Q' 3 81>>5< >? B=1<<5F5< Q
1F1<1>3 85 D5CD54 Q) 2 6B55 @<1D9>7 + ? " , 3 ? =@<91>D Q
* E1<96954 13 3 ? B49>7 D? $ )# 6? BD1B75D1@@<93 1D9? >C Q" 1 75> 6B55 13 3 ? B49>7 D? #
Type
#) ' ' ! #) # ' ' !
IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G
Product Summary V 9H R , ? >=1H , & I9
.( J
*&1 Y" )
*( 6
#) ) ' ' !
P.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPB029N06N3 |
INCHANGE |
N-Channel MOSFET | |
2 | IPB029N06N3 |
Infineon |
Power Transistor | |
3 | IPB029N06NF2S |
Infineon |
MOSFET | |
4 | IPB029N15NM6 |
Infineon |
MOSFET | |
5 | IPB020N08N5 |
Infineon |
MOSFET | |
6 | IPB020N10N5 |
Infineon |
MOSFET | |
7 | IPB020N10N5 |
INCHANGE |
N-Channel MOSFET | |
8 | IPB020N10N5LF |
INCHANGE |
N-Channel MOSFET | |
9 | IPB020N10N5LF |
Infineon |
MOSFET | |
10 | IPB021N06N3 |
Infineon |
Power Transistor | |
11 | IPB021N06N3G |
Infineon Technologies |
Power-Transistor | |
12 | IPB021N06N3G |
INCHANGE |
N-Channel MOSFET |