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. . . . . 1 Maximum ratings 3 Thermal characteristics .
•N-channel,normallevel
•OptimizedforFOMOSS
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•QualifiedaccordingtoJEDEC1)fortargetapplication
•Idealforhigh-frequencyswitchingandsynchronousrectification
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
2.0
mΩ
ID
176
A
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB020N10N5
Package PG-TO 263-3
Marking 020N10N5
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.3,2017-07-11
Opti.
IPB020N10N5 - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263(D2PAK) packaging ·Ultra-fast body diode ·High speed switching ·Ve.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPB020N10N5LF |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPB020N10N5LF |
Infineon |
MOSFET |
|
| 3 | IPB020N08N5 |
Infineon |
MOSFET |
|
| 4 | IPB021N06N3 |
Infineon |
Power Transistor |
|
| 5 | IPB021N06N3G |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPB021N06N3G |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPB022N12NM6 |
Infineon |
MOSFET |
|
| 8 | IPB023N04N |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPB023N04N |
Infineon |
Power Transistor |
|
| 10 | IPB023N04NG |
Infineon Technologies |
Power-Transistor |
|
| 11 | IPB024N08N5 |
Infineon |
MOSFET |
|
| 12 | IPB024N08NF2S |
Infineon |
MOSFET |
|