IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch.
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
•Halogen-free accoridng to IEC61249-2-21
Type
IPA030N10N3 G
100 V 3 mW 79 A
Package Marking
PG-TO220-FP 030N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPA030N10N3 |
INCHANGE |
N-Channel MOSFET | |
2 | IPA030N10N3 |
Infineon |
Power-Transistor | |
3 | IPA030N10NF2S |
Infineon |
MOSFET | |
4 | IPA032N06N3 |
INCHANGE |
N-Channel MOSFET | |
5 | IPA032N06N3G |
Infineon |
Power-Transistor | |
6 | IPA037N08N3 |
INCHANGE |
N-Channel MOSFET | |
7 | IPA037N08N3 |
Infineon |
Power-Transistor | |
8 | IPA037N08N3G |
Infineon Technologies |
Power-Transistor | |
9 | IPA028N08N3G |
Infineon Technologies |
Power-Transistor | |
10 | IPA029N06N |
Infineon |
MOSFET | |
11 | IPA029N06N |
INCHANGE |
N-Channel MOSFET | |
12 | IPA040N06N |
Infineon |
MOSFET |