Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 4.
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
4.0
mΩ
ID 69 A
QOSS
44
nC
QG(0V..10V)
38
nC
OptiMOSTMPower-Transistor,60V IPA040N06N
TO-220-FP
Gate Pin 1
Drain Pin 2
Source Pin 3
Type/OrderingCode IPA040N06N
Package PG-TO220-FP
Marking 040N06N
RelatedLinks -
1) J-STD20 and J.
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input r.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IPA041N04N |
INCHANGE |
N-Channel MOSFET | |
2 | IPA041N04NG |
Infineon |
MOSFET | |
3 | IPA045N10N3 |
INCHANGE |
N-Channel MOSFET | |
4 | IPA045N10N3 |
Infineon |
MOSFET | |
5 | IPA045N10N3G |
Infineon Technologies |
MOSFET | |
6 | IPA028N08N3G |
Infineon Technologies |
Power-Transistor | |
7 | IPA029N06N |
Infineon |
MOSFET | |
8 | IPA029N06N |
INCHANGE |
N-Channel MOSFET | |
9 | IPA030N10N3 |
INCHANGE |
N-Channel MOSFET | |
10 | IPA030N10N3 |
Infineon |
Power-Transistor | |
11 | IPA030N10N3G |
Infineon Technologies |
Power-Transistor | |
12 | IPA030N10NF2S |
Infineon |
MOSFET |