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isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 3mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta.
·Low drain-source on-resistance:
RDS(on) ≤ 3mΩ (max)
·Enhancement mode
·Fast Switching Speed
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Device for use in a wide variety of applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
100
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
79
IDM
Drain Current-Single Pulsed
316
PD
Total Dissipation @TC=25℃
41
Tj
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·.
IPA030N10N3 - Infineon
IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product.
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|---|---|---|---|---|
| 1 | IPA030N10N3G |
Infineon Technologies |
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| 2 | IPA030N10NF2S |
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| 3 | IPA032N06N3 |
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| 4 | IPA032N06N3G |
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| 6 | IPA037N08N3 |
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| 7 | IPA037N08N3G |
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| 8 | IPA028N08N3G |
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| 9 | IPA029N06N |
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| 10 | IPA029N06N |
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| 11 | IPA040N06N |
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