IPA030N10N3G |
Part Number | IPA030N10N3G |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • ... |
Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification •Halogen-free accoridng to IEC61249-2-21 Type IPA030N10N3 G 100 V 3 mW 79 A Package Marking PG-TO220-FP 030N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100... |
Document |
IPA030N10N3G Data Sheet
PDF 316.07KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPA030N10N3 |
INCHANGE |
N-Channel MOSFET | |
2 | IPA030N10N3 |
Infineon |
Power-Transistor | |
3 | IPA030N10NF2S |
Infineon |
MOSFET | |
4 | IPA032N06N3 |
INCHANGE |
N-Channel MOSFET | |
5 | IPA032N06N3G |
Infineon |
Power-Transistor |