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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications INCHANGE Semiconductor IPA029N06N ·ABSOLUT.
·With TO-220F package
·Low input capacitance and gate charge
·Low gate input resistance
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
INCHANGE Semiconductor
IPA029N06N
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous @Tc=25℃
(VGS at 10V)
Tc=100℃
Drain Current-Single Pulsed
±20
84 59
336
PD
Total Dissipation @TC=25℃
38
Tj
Max. Operating Junction.
IPA029N06N - Infineon
Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IPA028N08N3G |
Infineon Technologies |
Power-Transistor |
|
| 2 | IPA030N10N3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPA030N10N3 |
Infineon |
Power-Transistor |
|
| 4 | IPA030N10N3G |
Infineon Technologies |
Power-Transistor |
|
| 5 | IPA030N10NF2S |
Infineon |
MOSFET |
|
| 6 | IPA032N06N3 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IPA032N06N3G |
Infineon |
Power-Transistor |
|
| 8 | IPA037N08N3 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IPA037N08N3 |
Infineon |
Power-Transistor |
|
| 10 | IPA037N08N3G |
Infineon Technologies |
Power-Transistor |
|
| 11 | IPA040N06N |
Infineon |
MOSFET |
|
| 12 | IPA040N06N |
INCHANGE |
N-Channel MOSFET |
|